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| ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES * * * * * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package N-CHANNEL P-CHANNEL APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMD63C03XTA ZXMD63C03XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units Top View DEVICE MARKING * ZXM63C03 PROVISIONAL ISSUE A - JUNE 1999 13 ZXMD63C03X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=4.5V; T A=25C)(b)(d) (V GS=4.5V; T A=70C)(b)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T A=25C (a)(d) Linear Derating Factor Power Dissipation at T A=25C (a)(e) Linear Derating Factor Power Dissipation at T A=25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD PD T j:T stg 2.3 1.8 14 1.5 14 0.87 6.9 1.04 8.3 1.25 10 -55 to +150 N-CHANNEL 30 20 -2.0 -1.6 -9.6 -1.4 -9.6 P-CHANNEL -30 UNIT V V A A A A W mW/C W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(d) Junction to Ambient (a)(e) SYMBOL R JA R JA R JA VALUE 143 100 120 UNIT C/W C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. PROVISIONAL ISSUE A - JUNE 1999 14 ZXMD63C03X N-CHANNEL CHARACTERISTICS Max Power Dissipation (Watts) 100 Refer Note (a) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ID - Drain Current (A) 10 Refer Note (b) Refer Note (a) 10 DC 1s 100ms 10ms 1ms 100us 0.1 0.1 10 10 100 0 20 40 60 80 100 120 140 160 VDS - Drain-Source Voltage (V) T - Temperature () Safe Operating Area Derating Curve 120 Refer Note (b) 160 Thermal Resistance (C/W) Thermal Resistance (C/W) 100 80 60 D=0.5 140 120 100 80 60 40 20 D=0.2 D=0.1 D=0.05 D=0.5 Refer Note (a) 40 20 D=0.2 D=0.1 D=0.05 0 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 0 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JUNE 1999 15 ZXMD63C03X P-CHANNEL CHARACTERISTICS Max Power Dissipation (Watts) 100 Refer Note (a) 1.4 1.2 1.0 Refer Note (b) ID - Drain Current (A) 10 0.8 0.6 0.4 0.2 0 0 20 40 60 80 Refer Note (a) 10 0.1 DC 1s 100ms 10ms 1ms 100us 0.1 10 10 100 100 120 140 160 VDS - Drain-Source Voltage (V) T - Temperature () Safe Operating Area Derating Curve 120 Refer Note (b) 160 Thermal Resistance (C/W) Thermal Resistance (C/W) 100 80 60 D=0.5 140 120 100 80 60 40 20 D=0.2 D=0.1 D=0.05 D=0.5 Refer Note (a) 40 20 D=0.2 D=0.1 D=0.05 0 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 0 0.0001 0.001 0.01 Single Pulse 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JUNE 1999 16 ZXMD63C03X N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 16.9 9.5 0.95 V ns nC T j=25C, I S=1.7A, V GS=0V T j=25C, I F=1.7A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 2.5 4.1 9.6 4.4 8 1.2 2 ns ns ns ns nC nC nC V DS=24V,V GS=10V, I D =1.7A (Refer to test circuit) V DD =15V, I D=1.7A R G=6.1, R D=8.7 (Refer to test circuit) C iss C oss C rss 290 70 20 pF pF pF V DS=25 V, V GS=0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 1.9 1.0 0.135 0.200 30 1 100 V A nA V S I D=250A, V GS=0V V DS=30V, V GS=0V V GS= 20V, V DS=0V I D =250A, V DS= V GS V GS=10V, I D=1.7A V GS=4.5V, I D=0.85A V DS=10V,I D=0.85A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 1999 17 ZXMD63C03X N-CHANNEL TYPICAL CHARACTERISTICS 100 +25C 100 +150C ID - Drain Current (A) 10V 8V 7V 6V 5V 10 VGS 4.5V 4V 3.5V ID - Drain Current (A) 10V 8V 7V 6V 10 VGS 5V 4.5V 4V 3.5V 1 3V 1 3V 0.1 0.1 1 10 100 0.1 0.1 1 10 100 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 100 VDS=10V Normalised RDS(on) and VGS(th) 1.8 1.6 RDS(on) ID - Drain Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -100 10 VGS=10V ID=1.7A T=150C 1 T=25C VGS=VDS ID=250uA VGS(th) 0.1 2 2.5 3 3.5 4 4.5 5 5.5 6 -50 0 50 100 150 200 VGS - Gate-Source Voltage (V) Tj - Junction Temperature (C) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) v Temperature ISD - Reverse Drain Current (A) 100 RDS(on) - Drain-Source On-Resistance () 10 1 VGS=3V VGS=4.5V 0.1 VGS=10V 10 1 T=150 C T=25 C 0.1 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID - Drain Current (A) VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage Device type: ZX MD63N03X Author: Laurence Armstrong Date: 9th April 1999 Filename: 1P63N03.DW G PROVISIONAL ISSUE A - JUNE 1999 18 ZXMD63C03X N-CHANNEL CHARACTERISTICS 450 Vgs=0V f=1Mhz Ciss Coss Crss VGS - Gate-Source Voltage (V) 500 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 VDS=15V VDS=24V ID=1.7A C - Capacitance (pF) 400 350 300 250 200 150 100 50 0 0.1 1 10 100 VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JUNE 1999 19 ZXMD63C03X P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 21.4 15.7 -0.95 V ns nC T j=25C, I S=-1.2A, V GS=0V T j=25C, I F=-1.2A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 2.6 4.8 13.1 9.3 7 1.2 2 ns ns ns ns nC nC nC V DS=-24V,V GS=-10V, I D =-1.2A (Refer to test circuit) V DD =-15V, I D=-2.4A R G=6.2, R D=6.2 (Refer to test circuit) C iss C oss C rss 270 80 30 pF pF pF V DS=-25 V, V GS=0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 0.92 -1.0 0.185 0.27 -30 -1 100 V A nA V S I D=-250A, V GS=0V V DS=-30V, V GS=0V V GS= 20V, V DS=0V I D =-250A, V DS=V GS V GS=-10V, I D=-1.2A V GS=-4.5V, I D=-0.6A V DS=-10V,I D=-0.6A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 1999 20 ZXMD63C03X P-CHANNEL CHARACTERISTICS 100 +25 C 100 +150C -ID - Drain Current (A) 10 10V 8V 7V 6V -VGS 5V 4.5V 4V 3.5V -ID - Drain Current (A) 10 10V 8V 7V 6V -VGS 5V 4.5V 4V 3.5V 1 3V 1 3V 2.5V 2.5V 0.1 0.1 1 10 100 0.1 0.1 1 10 100 -VDS - Drain-Source Voltage (V) -VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 10 VDS=-10V Normalised RDS(on) and VGS(th) 2 RDS(on) -ID - Drain Current (A) 1.5 VGS=-10V ID=-1.2A VGS=VDS ID=-250uA VGS(th) T=150C 1 T=25C 1 0.5 0.1 2 2.5 3 3.5 4 4.5 5 5.5 6 0 -100 -50 0 50 100 150 200 -VGS - Gate-Source Voltage (V) Tj - Junction Temperature (C) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) v Temperature -ISD - Reverse Drain Current (A) 10 RDS(on) - Drain-Source On-Resistance () 10 1 1 VGS=-3V 0.1 T=150C T=25C VGS=-4.5V VGS=-10V 0.1 0.1 1 10 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JUNE 1999 21 ZXMD63C03X TYPICAL CHARACTERISTICS P-CHANNEL TYPICAL CHARACTERISTICS -VGS - Gate-Source Voltage (V) 600 Vgs=0V f=1Mhz 10 9 8 7 6 5 4 3 2 1 0 0 ID=-1.2A C - Capacitance (pF) 500 400 300 200 100 0 Ciss Coss Crss VDS=-15V VDS=-24V 0.1 1 10 100 1 2 3 4 5 6 7 8 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JUNE 1999 22 ZXMD63C03X PACKAGE DIMENSIONS D DIM Millimetres MIN MAX 1.10 0.05 0.25 0.13 2.90 0.65 2.90 4.90 0.40 0 0.15 0.40 0.23 3.10 BSC 3.10 BSC 0.70 6 Inches MIN MAX 0.043 0.002 0.010 0.005 0.114 0.0256 0.114 0.193 0.016 0 0.006 0.016 0.009 0.122 BSC 0.122 BSC 0.028 6 A 8 7 65 A1 E H 1 2 34 B C eX6 D e A1 E B C L A H L q Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JUNE 1999 24 |
Price & Availability of ZXMD63C03X
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